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| PD - 94923 IRG4PC30UPBF INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 23 12 92 92 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. 0.24 6 (0.21) Max. 1.2 40 Units C/W g (oz) www.irf.com 1 12/30/03 IRG4PC30UPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 Emitter-to-Collector Breakdown Voltage 18 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.63 1.95 Collector-to-Emitter Saturation Voltage 2.52 VCE(ON) 2.09 VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage -13 gfe Forward Transconductance 3.1 8.6 ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions V VGE = 0V, IC = 250A V VGE = 0V, IC = 1.0A V/C VGE = 0V, IC = 1.0mA 2.1 IC = 12A VGE = 15V IC = 23A See Fig.2, 5 V IC = 12A , TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100 V, IC = 12A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 n A VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf E ts LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 50 8.1 18 17 9.6 78 97 0.16 0.20 0.36 20 13 180 140 0.73 13 1100 73 14 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig.8 27 VGE = 15V TJ = 25C ns 120 IC = 12A, VCC = 480V 150 VGE = 15V, RG = 23 Energy losses include "tail" mJ See Fig. 10, 11, 13, 14 0.50 TJ = 150C, IC = 12A, VCC = 480V ns VGE = 15V, RG = 23 Energy losses include "tail" mJ See Fig. 13, 14 nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC30UPBF 40 For both: Triangular wave: Load Current (A) 30 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 24W Clamp voltage: 80% of rated Square wave: 20 60% of rated voltage 10 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 100 100 TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) TJ = 150C 10 TJ = 25C 1 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 0.1 5 6 7 8 V CC = 10V 5s PULSE WIDTH A 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC30UPBF Maximum DC Collector Current (A VCE , Collector-to-Emitter Voltage (V) 25 V GE = 15V 3.0 V GE = 15V 80s PULSE WIDTH IC = 24A 20 2.5 15 IC = 12A 2.0 10 5 I C = 6.0A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 A 150 1.5 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t2 Notes: 1. Duty factor D = t 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30UPBF 2000 C, Capacitance (pF) 1600 VGE , Gate-to-Emitter Voltage (V) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 12A 16 Cies 1200 12 800 Coes Cres 8 400 4 0 1 10 A 100 0 0 10 20 30 40 A 50 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 Total Switching Losses (mJ) 0.4 Total Switching Losses (mJ) VCC VGE TJ IC = 480V = 15V = 25C = 12A 10 RG = 23 V GE = 15V V CC = 480V IC = 24A 1 I C = 12A I C = 6.0A 0.3 0.2 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC30UPBF 1.6 Total Switching Losses (mJ) 1.2 I C , Collector-to-Emitter Current (A) RG TJ V CC V GE = 23 = 150C = 480V = 15V 1000 VGE = 20V GE TJ = 125C 100 SAFE OPERATING AREA 10 0.8 0.4 1 0.0 0 10 20 A 30 0.1 1 10 100 1000 I C , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC30UPBF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4PC30UPBF TO-247AC Package Outline 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A- Dimensions are shown in millimeters (inches) -D5.30 (.209) 4.70 (.185) 0.25 (.010) M D B M 5.50 (.217) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 12 - Drain GATE2 - Collector 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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